Double-pulse UV-fs-laser induced breakdown spectroscopy for high spatial resolution elemental analysis

Abstract

Display is used in various in modern society, such as small devices and monitors, and the market continues to grow. and The TFT panel in the Display is a very important part. As quality and resolution become better and better, the detection of defects in TFT panels is intuitively linked to demand. Among defects in TFT panel, we are going to detect short defect in real time using LIBS, and develop a technology that can stop processing at interface through the boundary analysis. LIBS is an analysis method that can analyze elements in real time. as the size of the crater become smaller, the intensity of the LIBS signal decrease. there are few signals in the high resolution area to be applied. Therefore, in this study, high resolution defects of width 2um and depth 700 nm are detected using UV-fs double pulse LIBS. After checking the energy where the single pulse LIBS signal does not come from the crater size 2 μm, the double pulse LIBS intensity was measured under various focal shift and inter-pulse delay conditions. As a result, we found the condition that most enhanced. Later, for the analysis of the interface, the characteristics were found through the LIBS signal analysis near the interface of the multi-layer sample under various energy conditions.