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Semiconducting Polymers with Nanocrystallites Interconnected via Boron-Doped Carbon Nanotubes

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Author(s)
Yu Kilho; Lee Ju Min; Kim Junghwan; Kim Geunjin; Kang, Hongkyu; Park Byoungwook; Kahng Yung Ho; Kwon Sooncheol; Lee Sangchul; Lee Byoung Hun; Kim Jehan; Park Hyung Il; Kim Sang Ouk; Lee, Kwang Hee
Type
Article
Citation
NANO LETTERS, v.14, no.12, pp.7100 - 7106
Issued Date
2014-11
Abstract
Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (mu FET) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the mu FET of the resulting FETs reaches 7.2 cm(2) V-1 s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984
DOI
10.1021/nl503574h
URI
https://scholar.gist.ac.kr/handle/local/32128
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