Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing

Abstract

Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for. type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material. (C) 2008 Optical Society of America