Volume-producible fabrication of a silicon nanowire via crystalline wet etching of (110) silicon

Abstract

This study presents a fabrication method of a mass-producible silicon nanowire (SiNW) using a (1 1 0) silicon wafer. Microscale silicon lines, patterned in standard photolithography, are reduced to 300 nm in width in a two-step wet-etching process. The silicon lines are transformed into the SiNW by a thermal oxidation process. The formation of SiNW after thermal oxidation was verified using a numerical oxidation simulation considering the two-dimensional growth of the oxide. After thermal wet oxidation at 970 degrees C for 50 min, silicon lines of 300 nm in width were transformed into the SiNWs of an inverse triangular cross-section with an effective width of approximately 70 nm. At the same time, the fabricated SiNWs were electrically isolated from the substrate without using an expensive silicon-on-insulator wafer. The pH sensing test, which is usually performed as a preliminary experiment for the biosensor applications, was conducted with respect to various pH solutions. The experimental sensitivity to the pH level was 0.55 nS pH(-1), when the voltage applied to the SiNW was 1 V. The SiNW has been completely fabricated by using only a conventional semiconductor process instead of a costly and time-consuming e-beam lithography process for the nanoscale patterning. The proposed fabrication method was successfully confirmed to have the potential of mass-producible and cost-effective SiNW devices for nano-biosensor applications.