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Direct femtosecond laser lithography for photoresist patterning

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Abstract
Development of maskless lithography techniques may solve the problem of photomask cost. Furthermore, it could open a market for small-scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with submicrometer resolution, it is attractive to use this technique for maskless lithography. In this paper, we report direct laser writing of lithographic patterns with submicron feature width on thin photoresist film by a femtosecond laser. The patterns were analyzed with a scanning electron microscope. The effects of laser energy and number of pulses on the feature size were investigated. Finally, we present various results on submicron photoresist patterning, which show great potential for future application. (c) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3081094]
Author(s)
Sohn, Ik-BuKo, Myeong-JinKim, Young-SeopNoh, Young-Chul
Issued Date
2009-02
Type
Article
DOI
10.1117/1.3081094
URI
https://scholar.gist.ac.kr/handle/local/17171
Publisher
S P I E - International Society for Optical Engineering
Citation
Optical Engineering, v.48, no.2
ISSN
0091-3286
Appears in Collections:
Research Institutes > 1. Journal Articles
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