유리기판을 이용한 비정질 실리콘 박막의 결정화

Abstract

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film, varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polyclystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.