Carrier Dynamics and Activation Energy of CdxZn1-xTe/ZnTe Quantum Dots on GaAs and Si Substrates

Abstract

We have investigated the carrier dynamics and activation energy of CdxZn1-xTe/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.