GIST Scholar
College of Engineering
Department of Mechanical and Robotics Engineering
1. Journal Articles
Depth profiling analysis of CuIn1-xGaxSe2 absorber layer by laser induced breakdown spectroscopy in atmospheric conditions
- Type
- Article
- Citation
- OPTICS EXPRESS, v.21, no.22, pp.A1018 - A1027
- Issued Date
- 2013-11
- Abstract
- This work reports the capability of depth profile analysis of thin CuIn1-xGaxSe2 (CIGS) absorber layer (1.89 mu m) with a sub-hundred nanometer resolution by laser induced breakdown spectroscopy (LIBS). The LIBS analysis was carried out with a commercial CIGS solar cell on flexible substrate by using a pulsed Nd:YAG laser (lambda = 532 nm, tau = 5 ns, top-hat profile) and an intensified charge-coupled device spectrometer in atmospheric conditions. The measured LIBS elemental profiles across the CIGS layer agreed closely to those measured by secondary ion mass spectrometry. The resolution of depth profile analysis was about 88 nm. Owing to the short measurement time of LIBS and the capability of in-air measurement, it is expected that LIBS can be applied for in situ analysis of elemental composition and their distribution across the film thickness during development and manufacturing of CIGS solar cells. (C) 2013 Optical Society of America
- Publisher
- OPTICAL SOC AMER
- ISSN
- 1094-4087
- Appears in Collections:
- Department of Mechanical and Robotics Engineering > 1. Journal Articles
- Files in This Item:
-
-
There are no files associated with this item.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.