High-Efficiency Polycrystalline Perovskite Light-Emitting Diodes Based on Mixed Cations
- Abstract
- We have achieved high-efficiency polycrystalline perovskite light-emitting diodes (PeLEDs) based on formamidinium (FA) and cesium (Cs) mixed cations without quantum dot synthesis. Uniform single-phase FA(1-x)Cs(x)PbBr(3) polycrystalline films were fabricated by one-step formation with various FA:Cs molar proportions; then the influences of chemical composition on film morphology, crystal structure, photoluminescence (PL), and electroluminescence (EL) were systematically investigated. Incorporation of Cs+ cations in FAPbBr(3) significantly reduced the average grain size (to 199 nm for FA:Cs = 90:10) and trap density; these changes consequently increased PL quantum efficiency (PLQE) and PL lifetime of FA(1-x)Cs(x)PbBr(3) films and current efficiency (CE) of PeLEDs. Further increase in Cs molar proportion from 10 mol % decreased crystallinity and purity, increased trap density, and correspondingly decreased PLQE, PL lifetime, and CE. Incorporation of Cs also increased photostability of FA(1-x)Cs(x)PbBr(3) films, possibly due to suppressed formation of light-induced metastable states. FA(1-x)Cs(x)PbBr(3) PeLEDs show the maximum CE = 14.5 cd A(-1) at FA:Cs = 90:10 with very narrow EL spectral width (21-24 nm); this is the highest CE among FA-Cs-based PeLEDs reported to date. This work provides an understanding of the influences of Cs incorporation on the chemical, structural, and luminescent properties of FAPbBr(3) polycrystalline films and a breakthrough to increase the efficiency of FA(1-x)Cs(x)PbBr(3) PeLEDs.
- Author(s)
- Cho, Himchan; Kim, Joo Sung; Wolf, Christoph; Kim, Young-Hoon; Yun, Hyung Joong; Jeong, Su-Hun; Sadhanala, Aditya; Venugopalan, Vijay; Choi, Jin Woo; Lee, Chang-Lyoul; Friend, Richard H.; Lee, Tae-Woo
- Issued Date
- 2018-03
- Type
- Article
- DOI
- 10.1021/acsnano.8b00409
- URI
- https://scholar.gist.ac.kr/handle/local/13365
- Publisher
- American Chemical Society
- Citation
- ACS Nano, v.12, no.3, pp.2883 - 2892
- ISSN
- 1936-0851
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