Organic Surface Doping for High-Performance Perovskite Transistors

Abstract

Quasi-2D perovskites have attracted significant attention because of their environmental robustness and superior long-term stability compared with their 3D counterparts. However, they typically consist of a mixture of multiple quantum wells with different optoelectrical properties, which degrades the electronic properties and hinders further electronic applications. Here, to challenge this issue, a surface p-doping strategy involving the introduction of a thiophene-containing polymer onto the surface of quasi-2D tin perovskites is reported. The tin ions in the perovskites effectively interact with the sulfur atoms in the thiophene moieties, thereby generating hole carriers and inducing p-doping. The resulting doped quasi-2D perovskites exhibit excellent surface crystallinity, lower trap density, and enhanced charge carrier transport capability along the perovskite semiconductor channels. Consequently, the doped quasi-2D tin perovskite-based transistors exhibit a high field-effect mobility of 53 cm2V−1s−1 (7 cm2V−1s−1 for the control device) and an outstanding on/off ratio (>107), together with superior operational stability. © 2024 The Author(s). Advanced Functional Materials published by Wiley-VCH GmbH.