OAK

Surface and bulk characterization of magnetic multilayers formed within a single layer FeRh by hydrogen ion irradiation

Metadata Downloads
Abstract
In modern spintronics, magnetic multilayers, such as a ferromagnet/antiferromagnet (FM/AFM) heterostructure, are essential for achieving novel and practical capabilities, including the exchange bias effect, spin-transfer torque, tunneling magnetoresistance, etc. As these functions are determined by the exchange interaction or the carrier transport across the interface, it is critical to optimize the magnetic interface usually formed between different materials with the chemical mismatch as well as the structural discontinuity. Here, we explored the potential of FeRh for creating the FM/AFM multilayer within a single material by exploiting its tunability of the temperature-dependent AFM-FM transition with a hydrogen ion irradiation. We investigated bulk and surface magnetic states separately based on a magneto-optical Kerr effect and magnetization-induced second-harmonic generation, respectively, and could reveal that FeRh can host the FM (surface)/AFM (bulk) magnetic multilayer within a single layer of FeRh even at room temperature prepared with a hydrogen ion dose of 2.0×1015 H+/cm2. As the FM and AFM states are stabilized with a well-defined spatial separation as manifested by the exchange bias effect, we expect the FeRh-based FM/AFM bilayer to alleviate limitations arising from the interfaces formed by otherwise different materials. © 2024 Elsevier B.V.
Author(s)
Kim, Hyo SeokSong, SehwanChoi, In HyeokPark, SungkyunLee, Jong Seok
Issued Date
2025-01
Type
Article
DOI
10.1016/j.jallcom.2024.177447
URI
https://scholar.gist.ac.kr/handle/local/9130
Publisher
Elsevier Ltd
Citation
Journal of Alloys and Compounds, v.1010
ISSN
0925-8388
Appears in Collections:
Department of Physics and Photon Science > 1. Journal Articles
공개 및 라이선스
  • 공개 구분공개
파일 목록
  • 관련 파일이 존재하지 않습니다.

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.