Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography

Abstract

Field-effect transistors based on two-dimensional materials are a potential replacement for silicon-based devices in next-generation semiconductor chips. However, the weak interfacial adhesion energy between two-dimensional materials and substrates can lead to low yields and non-uniform transistors on the wafer scale. Furthermore, conventional photolithography processes—including photochemical reactions and chemical etching—can damage atomically thin materials. Here we show that the interfacial adhesion energy between two-dimensional materials and different substrates can be quantified using a four-point bending method. We find that a molybdenum disulfide/silicon dioxide interface has an interfacial adhesion energy of 0.2 J m