OAK

Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs

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Author(s)
Kwon, Young-KiJ. H. HwangH. J. MunS. B. LeeS. M. HongJang, Jae Hyung
Type
Conference Paper
Citation
45TH INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS
Issued Date
2018-06-01
Publisher
Massachusetts Institute of Technology
Conference Place
US
URI
https://scholar.gist.ac.kr/handle/local/8542
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