OAK

Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs

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Author(s)
Kwon, Young-KiJ. H. HwangH. J. MunS. B. LeeS. M. HongJang, Jae Hyung
Issued Date
2018-06-01
Type
Conference Paper
URI
https://scholar.gist.ac.kr/handle/local/8542
Publisher
Massachusetts Institute of Technology
Citation
45TH INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS
Conference Place
US
Appears in Collections:
Department of Electrical Engineering and Computer Science > 2. Conference Papers
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