GIST Repository
College of Information and Computing
Department of Electrical Engineering and Computer Science
2. Conference Papers
Mobility calculation of nanosheet transistors at cryogenic temperatures: Impact of nanosheet cross-section and channel strain
- Publisher
- Electronic Society, The Institute of Electronics, Information and Communications Engineers
- Citation
- Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Conference Place
- JA
- Appears in Collections:
- Department of Electrical Engineering and Computer Science > 2. Conference Papers
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