GIST Scholar
College of Artificial Intelligence
Department of Electrical Engineering and Computer Science
1. Journal Articles
Porous ZnO nanoparticle films with redox-active oxygen environments for stable resistive switching
- Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C
- Issued Date
- ACCEPT
- Abstract
- ZnO-based resistive switching devices have attracted attention for nonvolatile memory and neuromorphic applications, but the structural and chemical factors responsible for stable switching are not yet fully understood. ZnO nanoparticle films (NP), as-deposited sputtered ZnO films (SP), and annealed sputtered ZnO (SPa) films were compared in terms of their structural, chemical, and electrical characteristics. Stable bipolar resistive switching was achieved only in the NP device, whereas the SP, and SPa devices did not exhibit stable reset operation. XPS revealed that the NP film had lower O-1s binding energies than the SP-derived films, indicating a more reactive oxygen environment. X-ray diffraction and porosity analyses further showed that the NP film possessed lower crystallinity and significantly higher porosity, corresponding to a porous nanoparticle network. In contrast, the SP-derived films were denser and more highly oriented, and although some of them exhibited low-voltage set behavior, stable reset was not obtained. These results indicate that stable switching in ZnO is governed not simply by defect fraction, but by the combined effects of oxygen chemical state and film structure. The NP device also exhibited 4-level multilevel switching, basic LTP/LTD-type conductance modulation, and approximately 84% recognition accuracy in an MNIST simulation using experimentally extracted device parameters. These findings suggest that porous ZnO nanoparticle films provide a favorable platform for stable RRAM operation and potential neuromorphic applications.
- Publisher
- ROYAL SOC CHEMISTRY
- ISSN
- 2050-7526
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