Ferroelectric phototransistors for in-sensor image processing toward all-day facial recognition

Abstract

In this talk, we introduce a ferroelectric-gated phototransistor (FGPT) incorporating ferroelectric polymers and organic photoactive channels for neuromorphic vision systems. The partial polarization switching in the ferroelectric gate insulator enables linear control of the photoactive channel. Furthermore, the photogating effect induced by charge trapping at the ferroelectric insulator/photoactive channel interface further enhances the photonic non-volatile characteristics of the FGPT. This allows memorized visual information, expressed as photoconductance, to be incrementally potentiated or depressed. The modulated photoconductance fully spans the current level within the dynamic range of the device (153 dB). Finally, we show the feasibility of the device for all-day face recognition by in-sensor processing of visual information obtained from unstructured environments into the pre-trained range. This approach results in up to a ~40% improvement in recognition accuracy. © 2026 IEEE.