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Input voltage scheme for DOT product engine using NAND flash cells

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Author(s)
Lee, Sung-TaeLim, SuhwanChoi, NagyongBae, Jong-HoKwon, DongseokKim, Hyeong-SuPark, Byung-GookLee, Jong-Ho
Type
Conference Paper
Citation
2019 China Semiconductor Technology International Conference, CSTIC 2019
Issued Date
2019-03-18
Abstract
Hardware-based neural networks are expected to be a new computing breakthrough beyond conventional von Neumann architecture because of their low power operations. In this work, we investigate input voltage scheme for feedforward neural networks using NAND flash cells as synaptic devices. Additional periphery circuit is required to apply input to the word line. However, due to the linearity of IBL-VBL curve in the linear region, input can be applied to bit line without additional circuits. © 2019 IEEE.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Conference Place
CC
Shanghai
URI
https://scholar.gist.ac.kr/handle/local/34047
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