First Demonstration of Innovative 3D AND-Type Fully-Parallel Convolution Block with Ultra-High Area-and Energy-Efficiency
- Author(s)
- Kim, Jangsaeng; Im, Jiseong; Ko, Jonghyun; Lee, Soochang; Kwon, Dongseok; Shin, Wonjun; Hwang, Joon; Koo, Ryun-Han; Choi, WooYoung; Lee, Jong-Ho
- Type
- Conference Paper
- Citation
- 2023 International Electron Devices Meeting, IEDM 2023
- Issued Date
- 2023-12-09
- Abstract
- We propose for the first time a novel 3D AND-type flash memory array for a fully-parallel convolution block (FPCB) designed to realize compute-in-memory technology. By leveraging the structural advantages of 3D AND-type cells, the FPCB achieves area- and energy-efficient convolution and fully-connected operations with full memory utilization. In the convolution operation, the FPCB significantly reduces the number of cells and line resistance by a factor of about 10-4 or less (for the ImageNet dataset). Compared to conventional crossbars, the FPCB reduces ~96% and ~74% of area occupancy and energy consumption, respectively. © 2023 IEEE.
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Conference Place
- US
San Francisco
- URI
- https://scholar.gist.ac.kr/handle/local/34040
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