GIST Scholar
College of Information and Computing
Department of Semiconductor Engineering
1. Journal Articles
Growing single-crystalline antimony oxide with van der Waals epitaxy
- Type
- Article
- Citation
- Nature Electronics, v.9, no.4, pp.341 - 343
- Issued Date
- 2026-04
- Abstract
- Atomically thin single-crystalline high-κ dielectrics can be grown directly on a two-dimensional semiconductor by van der Waals epitaxy, providing ultrathin gate stacks with excellent interface quality. © Springer Nature Limited 2026.
- Publisher
- NATURE PUBLISHING GROUP
- ISSN
- 2520-1131
- Appears in Collections:
- Department of Semiconductor Engineering > 1. Journal Articles
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