Quasi-1D Model for Bridging TCAD Simulation and Compact Modeling of Gate-All-Around MOSFETs

Abstract

A quasi-1D model is an intermediate-level approach that solves the one-dimensional carrier continuity equation along the channel direction, together with the cross-sectional charge model. It offers significantly higher computational efficiency compared to the technology computer-aided design (TCAD) simulation, while accurately accounting for geometric effects. By bridging the TCAD simulation and the compact modeling, the quasi-1D model enables a seamless transition between these two fields. In this work, we present results of our quasi-1D model for gate-all-around MOSFETs. Starting with the cross-sectional charge model, we demonstrate the complete quasi-1D model results and their implications. © 2025 Elsevier B.V., All rights reserved.