Numerical Investigation of Electrical Performance and Scaling Properties in 6T1C IGZO-Based Synaptic Devices

Abstract

A 6T1C IGZO-based synaptic memory has excellent linearity, symmetry, and retention characteristics. In this work, we numerically investigate the performance of a 6T1C IGZO-based synaptic memory by examining leakage characteristics, synaptic behavior, and capacitance scaling. The impact of cell size reduction on retention characteristics is also evaluated.