GIST Repository
College of Information and Computing
Department of Electrical Engineering and Computer Science
2. Conference Papers
Numerical Investigation of Electrical Performance and Scaling Properties in 6T1C IGZO-Based Synaptic Devices
- Type
- Conference Paper
- Citation
- 2025 Silicon Nanoelectronics Workshop, SNW 2025, pp.86 - 87
- Issued Date
- 2025
- Abstract
- A 6T1C IGZO-based synaptic memory has excellent linearity, symmetry, and retention characteristics. In this work, we numerically investigate the performance of a 6T1C IGZO-based synaptic memory by examining leakage characteristics, synaptic behavior, and capacitance scaling. The impact of cell size reduction on retention characteristics is also evaluated. © 2025 Elsevier B.V., All rights reserved.
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Conference Place
- Kyoto
- Appears in Collections:
- Department of Electrical Engineering and Computer Science > 2. Conference Papers
- 파일 목록
-
-
관련 파일이 존재하지 않습니다.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.