Transfer-Free Growth of Few-Layer Graphene by Self-Assembled Monolayers
- Author(s)
- Shin, HJ; Choi, WM; Yoon, SM; Han, GH; Woo, YS; Kim, ES; Chae, SJ; Li, XS; Benayad, A; Loc, DD; Gunes, F; Lee, YH; Choi, JY
- Type
- Article
- Citation
- ADVANCED MATERIALS, v.23, no.38, pp.4392 - 4397
- Issued Date
- 2011-10
- Abstract
- Graphene layers are directly synthesized on an oxide substrate without transfer. The catalytic structure aids graphene formation without the vaporization of a self-assembled monolayer (SAM) material and induces direct growth of graphene on the substrate. Film uniformity and the number of graphene layers are modulated. The catalytic structure and growth process provide a robust method for transfer-free graphene growth with uniform thickness.
- Publisher
- WILEY-V C H VERLAG GMBH
- ISSN
- 0935-9648
- DOI
- 10.1002/adma.201102526
- URI
- https://scholar.gist.ac.kr/handle/local/31781
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