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Revisiting Ferroelectric-Gated Phototransistors: A Tripartite Synapse-Inspired Approach to In-Sensor Image Processing

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Author(s)
Lee, YubinSeo, Dong HyunLee, Jun SeoJeon, Jae MinKim, Hyung RaeKim, Min SeokAhn, ChaehyeonAn, Sung-UnChoi, JihunKim, HyunseungJeong, Chang KyuLim, HyunseobKang, Dong-HoSong, Young Min
Type
Article
Citation
Advanced Materials
Issued Date
2025-07
Abstract
Neuromorphic devices inspired by the tripartite synapse system offer enhanced modulation of synaptic weight via a third terminal. However, using an electrically independent terminal for memorizing and processing optical information remains unexplored. Here, a ferroelectric-gated phototransistor (FGPT) incorporating ferroelectric polymers and organic photoactive channels is revisited for neuromorphic vision systems. It is demonstrated that partial polarization switching in the ferroelectric gate insulator enables linear control of the photoactive channel. Furthermore, the photogating effect induced by charge trapping at the ferroelectric insulator/photoactive channel interface further enhances the photonic non-volatile (PNV) characteristics of the FGPT. This allows memorized visual information, expressed as photoconductance, to be incrementally potentiated or depressed. The modulated photoconductance fully spans the current level within the dynamic range of the device (153 dB). Finally, the feasibility of the device for all-day face recognition is shown by in-sensor processing of visual information obtained from unstructured environments into the pre-trained range. This approach results in up to a ≈40% improvement in recognition accuracy. © 2025 The Author(s). Advanced Materials published by Wiley-VCH GmbH.
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0935-9648
DOI
10.1002/adma.202503475
URI
https://scholar.gist.ac.kr/handle/local/31550
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