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Metallicity and anomalous Hall effect in epitaxially strained, atomically thin RuO2 films

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Author(s)
Jeong, Seung GyoLee, SeungjunLin, BonnieYang, ZhifeiChoi, In HyeokOh, Jin YoungSong, SehwanLee, Seung WookNair, SreejithChoudhary, RashmiParikh, JuhiPark, SungkyunChoi, Woo SeokLee, Jong SeokLeBeau, James M.Low, TonyJalan, Bharat
Type
Article
Citation
Proceedings of the National Academy of Sciences of the United States of America, v.122, no.24
Issued Date
2025-06
Abstract
The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to disorder and defects suppressing metallicity thus hindering its detection. Here, we demonstrate that ultrathin, fully strained 2 nm TiO2/t nm RuO2/TiO2 (110) heterostructures, grown by hybrid molecular beam epitaxy, retain metallicity and exhibit a sizeable AHE at a significantly lower magnetic field (< 9 T). Density functional theory calculations reveal that epitaxial strain stabilizes a noncompensated magnetic ground state and reconfigures magnetic ordering in RuO2 (110) thin films. These findings establish ultrathin RuO2 as a platform for strain-engineered magnetism and underscore the transformative potential of epitaxial design in advancing spintronic technologies. Copyright © 2025 the Author(s).
Publisher
National Academy of Sciences
ISSN
0027-8424
DOI
10.1073/pnas.2500831122
URI
https://scholar.gist.ac.kr/handle/local/31528
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