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On-chip terahertz emission from Floquet-Bloch states

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Author(s)
Li, Xinyu; Hagelstein, Jesse; Sturm, Felix; Kusyak, Kateryna; Aranzadi, Juan; Kipp, Gunda; Huang, Yunfei; Schulte, Benedikt; Potts, Alex; Cordero, Victoria; Trovatello, Chiara; Peng, Zhi Hao; Hu, Chaowei; DeStefano, Jonathan; Taniguchi, Takashi; Watanabe, Kenji; Sentef, Michael; Shin, Dongbin; Schuck, James; Xu, Xiaodong; Chu, Jiun-Haw; Bretscher, Hope; Day, Matthew; McIver, James
Type
Article
Citation
Optical Materials Express, v.15, no.8, pp.1765 - 1776
Issued Date
2025-08
Abstract
Floquet engineering uses time-periodic electromagnetic fields to modify the electronic properties of quantum materials via the creation of Floquet-Bloch states. These photon-dressed states inherit features from both the material and the driving field, enabling the exploration and control of quantum phenomena in light-matter hybrid systems. In non-centrosymmetric materials, shift currents can arise from the quantum geometric properties of electronic wavefunctions. However, shift currents from Floquet-Bloch states remain experimentally unexplored. Here, we employ an on-chip optoelectronic circuit to detect intrinsic terahertz emission from Floquet-Bloch states in Td-WTe2 under intense optical driving. We observe strong edge-localized terahertz emission that scales linearly with the driving field, consistent with the theoretical prediction for shift currents generated by Floquet-Bloch states. The results advance our understanding of strongly driven quantum materials and provide insights for developing efficient, bias-free terahertz sources for future optoelectronic technologies.
Publisher
Optical Society of America
ISSN
2159-3930
DOI
10.1364/ome.554534
URI
https://scholar.gist.ac.kr/handle/local/31500
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