OAK

Low voltage operation of Inverted Staggered Amorphous Indium Gallium Zinc Oxide Thin Film Transistor with Al2O3 High-k Dielectic Material

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Author(s)
장재형
Type
Conference Paper
URI
https://scholar.gist.ac.kr/handle/local/31242
Publisher
The Japan Society od Applied Physics
Citation
International Conference on Solid State Devices and Materials
Conference Place
JA
Appears in Collections:
Department of Electrical Engineering and Computer Science > 2. Conference Papers
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