GIST Scholar
College of Engineering
Department of Materials Science and Engineering
2. Conference Papers
A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for sub-32nm Technology Node Low Power Metal Gate/High-K Dielectric CMOSFETs
- Type
- Conference Paper
- Citation
- 2009 IEEE International Electron Devices Meeting
- Publisher
- IEEE
- Conference Place
- US
- Appears in Collections:
- Department of Materials Science and Engineering > 2. Conference Papers
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