GIST Scholar
College of Engineering
Department of Materials Science and Engineering
2. Conference Papers
The effect of nucleation layer on the low temperature growth of GaN using remote plasma enhanced ultrahigh vacuum chemical vapor deposition
- Type
- Conference Paper
- Citation
- , pp.75 - 80
- Issued Date
- 1998-05-01
- Appears in Collections:
- Department of Materials Science and Engineering > 2. Conference Papers
- Files in This Item:
-
-
There are no files associated with this item.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.