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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

The effect of nucleation layer on the low temperature growth of GaN using remote plasma enhanced ultrahigh vacuum chemical vapor deposition

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Author(s)
박성주
Type
Conference Paper
Citation
, pp.75 - 80
Issued Date
1998-05-01
URI
https://scholar.gist.ac.kr/handle/local/30649
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