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GIST Scholar College of Natural Sciences Department of Physics and Photon Science 2. Conference Papers

Electrical characteristics of AlOxNy prepared by oxidation of sub 10nm-thick AlN films for MOS gate dielectrics applications

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Author(s)
노도영
Type
Conference Paper
Citation
제7회 반도체학술대회, pp.27
Issued Date
2000-01-01
Publisher
제7회 반도체학술대회
Conference Place
KO
URI
https://scholar.gist.ac.kr/handle/local/30321
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