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Molecular beam epitaxy (MBE) growth of high quality InP, InGaP/GaAs, and InGaAs/InP heterostructure with GaAs and GaP decomposition sources

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Author(s)
이용탁
Type
Conference Paper
Issued Date
2000-01-01
URI
https://scholar.gist.ac.kr/handle/local/30291
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