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GIST Scholar College of Information and Computing Department of Electrical Engineering and Computer Science 2. Conference Papers

High-quality growth of strongly disordered InGaP/GaAs by molecular beam epitaxy with GaP decomposition source

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Author(s)
이용탁
Type
Conference Paper
Issued Date
2000-01-01
URI
https://scholar.gist.ac.kr/handle/local/30290
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