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GIST Scholar College of Artificial Intelligence Department of Electrical Engineering and Computer Science 2. Conference Papers

Properties of Be-doped InGaAs/InP Grown by Low-Temperature Molecular Beam Epitaxy for Ultrafast All-Optical Switching Devices

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Author(s)
이용탁
Type
Conference Paper
Issued Date
2000-11-01
URI
https://scholar.gist.ac.kr/handle/local/30125
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