OAK

Properpies of InGaAs Grown by Low-Temperature Molecular Beam Epitaxy with Polycrystalline GaAs and GaP Decompisition Sources

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Author(s)
이용탁
Type
Conference Paper
Citation
, pp.0
Issued Date
2000-11-01
URI
https://scholar.gist.ac.kr/handle/local/30120
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