OAK

Layer thickness dependence of strain in GaN grown by hydride vapor phase epitaxy

Metadata Downloads
Author(s)
노도영
Type
Conference Paper
Citation
Mat. Res. Soc. Symp
Issued Date
2001-01-01
Publisher
Mat. Res. Soc. Symp
Conference Place
US
URI
https://scholar.gist.ac.kr/handle/local/30033
Authorize & License
  • Authorize공개
Files in This Item:
  • There are no files associated with this item.

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.