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GIST Scholar College of Information and Computing Department of Electrical Engineering and Computer Science 2. Conference Papers

Impurity-free vacancy disordering in InGaAs/InP and InGaAs/InGaAsP multiple quantum wells: Effects of In0.53Ga0.47As cap layer and stoichiometry of di

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Author(s)
이용탁
Type
Conference Paper
Issued Date
2001-05-01
URI
https://scholar.gist.ac.kr/handle/local/29901
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