GIST Scholar
College of Engineering
Department of Materials Science and Engineering
2. Conference Papers
High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation
- Type
- Conference Paper
- Citation
- , pp.15 - 16
- Issued Date
- 2001-06-01
- Appears in Collections:
- Department of Materials Science and Engineering > 2. Conference Papers
- Files in This Item:
-
-
There are no files associated with this item.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.