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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Dopant penetration effects on polysilicon gate HfO2 MOSFET

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Author(s)
이병훈
Type
Conference Paper
Citation
, pp.131 - 132
Issued Date
2001-06-01
URI
https://scholar.gist.ac.kr/handle/local/29851
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