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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Selective epitaxial growth of GaN on Si (111) patterned with Al0.5Ga0.5N/AlN buffer layer by ultrahigh vacuum chemical vapor deposition

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Author(s)
박성주
Type
Conference Paper
Citation
한국물리학회, pp.474
Issued Date
2001-10-01
URI
https://scholar.gist.ac.kr/handle/local/29751
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