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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Gate Postdoping to Decouple Implant/Anneal for Gate, Source/Drain, and Extension:Maximizing Polysilicon Gate Activation for 0.1 µm CMOS Technologies

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Author(s)
이병훈
Type
Conference Paper
Issued Date
2002-06-01
URI
https://scholar.gist.ac.kr/handle/local/29484
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