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Monolithnic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applications

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Author(s)
장재형
Type
Conference Paper
Citation
IEEE, pp.55 - 58
Issued Date
2002-10-01
URI
https://scholar.gist.ac.kr/handle/local/29382
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