GIST Scholar
College of Engineering
Department of Materials Science and Engineering
2. Conference Papers
Effects of high pressure hydrogen and deuterium anneal on TiN gate nMOSFET with Hf-base gate dielectrics
- Type
- Conference Paper
- Citation
- , pp.748 - 749
- Issued Date
- 2004-09-01
- Appears in Collections:
- Department of Materials Science and Engineering > 2. Conference Papers
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