OAK

Suppression of Kink Phenomenon in Ultra-High-Speed Strained InAs-Inserted E-mode HEMTs with a New Y-shaped Gate Technology and Their Impacts on Device

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Author(s)
송종인
Type
Conference Paper
Citation
IEDM, pp.1027 - 1030
Issued Date
2004-12-01
URI
https://scholar.gist.ac.kr/handle/local/28399
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