GIST Scholar
College of Engineering
Department of Materials Science and Engineering
2. Conference Papers
Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices
- Type
- Conference Paper
- Citation
- , pp.80 - 81
- Issued Date
- 2005-04-01
- Appears in Collections:
- Department of Materials Science and Engineering > 2. Conference Papers
- Files in This Item:
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