GIST Scholar
College of Engineering
Department of Materials Science and Engineering
2. Conference Papers
Dominant SILC mechanisms in TiN/HfO2 gate NMOS and PMOS transistors
- Type
- Conference Paper
- Citation
- , pp.642 - 645
- Issued Date
- 2005-04-01
- Appears in Collections:
- Department of Materials Science and Engineering > 2. Conference Papers
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