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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Dominant SILC mechanisms in TiN/HfO2 gate NMOS and PMOS transistors

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Author(s)
이병훈
Type
Conference Paper
Citation
, pp.642 - 645
Issued Date
2005-04-01
URI
https://scholar.gist.ac.kr/handle/local/28209
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