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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode

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Author(s)
이병훈
Type
Conference Paper
Issued Date
2005-09-01
URI
https://scholar.gist.ac.kr/handle/local/27946
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