OAK

Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Gate Metallization

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Alternative Title
Ti/Pt/Au금속을 사용한 InP substrates에 격자를 맞춘 Enhancement-mode HEMT
Author(s)
장재형
Issued Date
2005-10-01
Type
Conference Paper
URI
https://scholar.gist.ac.kr/handle/local/27911
Citation
THE JAPAN SOCIETY OF APPLIED PHYSICS, pp.700 - 701
Appears in Collections:
Department of Electrical Engineering and Computer Science > 2. Conference Papers
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