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GIST Scholar College of Information and Computing Department of Electrical Engineering and Computer Science 2. Conference Papers

Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Gate Metallization

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Author(s)
장재형
Type
Conference Paper
Citation
THE JAPAN SOCIETY OF APPLIED PHYSICS, pp.700 - 701
Issued Date
2005-10-01
URI
https://scholar.gist.ac.kr/handle/local/27911
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