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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

The position dependence of Si delta-doped layer in GaN barrier layer on optical properties of InGaN/GaN single quantum well

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Author(s)
박성주
Type
Conference Paper
Citation
13th Int. Conf. on Metal Organic Vapor Phase Epitaxy, pp.0
Issued Date
2006-05-22
Conference Place
JA
URI
https://scholar.gist.ac.kr/handle/local/27536
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