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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET

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Author(s)
이병훈
Type
Conference Paper
Issued Date
2006-09-01
URI
https://scholar.gist.ac.kr/handle/local/27339
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