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Long wavelength light-emitting diodes with In-rich InGaN quantum dots formed by an enhanced phase-separation in InGaN

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Author(s)
박성주
Type
Conference Paper
Citation
International Workshop on Nitride Semiconductors(IWN 2006), pp.0
Issued Date
2006-10-22
Conference Place
JA
URI
https://scholar.gist.ac.kr/handle/local/27253
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